STP10NK70Z STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 700V 8.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 128 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 3.71 EUR |
| 100+ | 3.64 EUR |
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Technische Details STP10NK70Z STMicroelectronics
Description: MOSFET N-CH 700V 8.6A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: TO-220, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V.
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