STP110N8F7 STMicroelectronics
auf Bestellung 1901 Stücke:
Lieferzeit 592-606 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 5.67 EUR |
| 11+ | 5.12 EUR |
| 25+ | 4.84 EUR |
| 100+ | 4.11 EUR |
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Technische Details STP110N8F7 STMicroelectronics
Description: MOSFET N-CH 80V 80A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V.
Weitere Produktangebote STP110N8F7
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STP110N8F7 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 80V 80A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STP110N8F7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 80V 80A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP110N8F7 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 80V 80A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V |
Produkt ist nicht verfügbar |