STP12N60M2 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in TO-220 package
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.55 EUR |
| 10+ | 2.92 EUR |
| 100+ | 1.98 EUR |
| 500+ | 1.68 EUR |
| 1000+ | 1.43 EUR |
| 2000+ | 1.38 EUR |
| 5000+ | 1.36 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details STP12N60M2 STMicroelectronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 5.7A; Idm: 36A, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 5.7A, Case: TO220-3, Gate-source voltage: ±25V, On-state resistance: 0.45Ω, Mounting: THT, Gate charge: 16nC, Kind of channel: enhancement, Pulsed drain current: 36A, Power dissipation: 85W, Technology: MDmesh™ M2, Kind of package: tube.
Weitere Produktangebote STP12N60M2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
STP12N60M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 5.7A; Idm: 36A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.45Ω Mounting: THT Gate charge: 16nC Kind of channel: enhancement Pulsed drain current: 36A Power dissipation: 85W Technology: MDmesh™ M2 Kind of package: tube |
auf Bestellung 206 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STP12N60M2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 5.7A; Idm: 36A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 16nC
Kind of channel: enhancement
Pulsed drain current: 36A
Power dissipation: 85W
Technology: MDmesh™ M2
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 5.7A; Idm: 36A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 16nC
Kind of channel: enhancement
Pulsed drain current: 36A
Power dissipation: 85W
Technology: MDmesh™ M2
Kind of package: tube
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)