STP130N6F7 STMICROELECTRONICS
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STP130N6F7 - Leistungs-MOSFET, n-Kanal, 60 V, 80 A, 4200 µohm, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 80A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 160W
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: STripFET F7
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 4200µohm
SVHC: No SVHC (25-Jun-2025)
| Anzahl | Privatkunde |
|---|---|
| 71+ | 3.55 EUR |
| 108+ | 2.15 EUR |
| 109+ | 1.96 EUR |
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Technische Details STP130N6F7 STMICROELECTRONICS
Description: STMICROELECTRONICS - STP130N6F7 - Leistungs-MOSFET, n-Kanal, 60 V, 80 A, 4200 µohm, TO-220, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 80A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 160W, Bauform - Transistor: TO-220, Anzahl der Pins: 3Pin(s), Produktpalette: STripFET F7, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 4200µohm, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote STP130N6F7 nach Preis ab 1.39 EUR bis 5.66 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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STP130N6F7 | STMicroelectronics |
MOSFETs N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in TO-220 package |
auf Bestellung 1814 Stücke: Lieferzeit 10-14 Tag (e) |
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STP130N6F7 | STMicroelectronics |
Description: MOSFET N-CH 60V 80A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
auf Bestellung 1344 Stücke: Lieferzeit 10-14 Tag (e) |
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STP130N6F7 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 80A; Idm: 320A Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Pulsed drain current: 320A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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| STP130N6F7 |
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Hersteller: STMicroelectronics
MOSFETs N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in TO-220 package
MOSFETs N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in TO-220 package
auf Bestellung 1814 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.58 EUR |
| 10+ | 2.26 EUR |
| 100+ | 1.93 EUR |
| 500+ | 1.61 EUR |
| 1000+ | 1.44 EUR |
| 5000+ | 1.39 EUR |
| STP130N6F7 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 60V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 1344 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.66 EUR |
| 10+ | 3 EUR |
| 50+ | 2.27 EUR |
| 100+ | 2.05 EUR |
| 500+ | 1.63 EUR |
| STP130N6F7 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 80A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 80A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 5.66 EUR |