STP13N95K3 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
| Anzahl | Preis |
|---|---|
| 2+ | 10.56 EUR |
| 50+ | 5.74 EUR |
| 100+ | 5.37 EUR |
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Technische Details STP13N95K3 STMicroelectronics
Description: MOSFET N-CH 950V 10A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 5A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V.
Weitere Produktangebote STP13N95K3 nach Preis ab 5.84 EUR bis 12.02 EUR
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STP13N95K3 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 950V SuperMESH3 Zener-Protected 10A |
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| STP13N95K3 |
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auf Bestellung 400 Stücke: Lieferzeit 21-28 Tag (e) |