STP160N4LF6 STMicroelectronics

Description: MOSFET N-CH 40V 120A TO220, Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.