STP16N65M2 STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in TO-220 package
auf Bestellung 976 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.01 EUR |
| 10+ | 2.89 EUR |
| 25+ | 1.66 EUR |
| 100+ | 1.61 EUR |
| 250+ | 1.59 EUR |
| 500+ | 1.56 EUR |
| 1000+ | 1.52 EUR |
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Technische Details STP16N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 11A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V.
Weitere Produktangebote STP16N65M2
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STP16N65M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube |
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STP16N65M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube |
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| STP16N65M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube |
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| STP16N65M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.9A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 19.5nC Technology: MDmesh™ M2 Pulsed drain current: 44A Anzahl je Verpackung: 1 Stücke |
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STP16N65M2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 11A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V |
Produkt ist nicht verfügbar |
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| STP16N65M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.9A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 19.5nC Technology: MDmesh™ M2 Pulsed drain current: 44A |
Produkt ist nicht verfügbar |