STP170N8F7 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1+ | 5.49 EUR |
| 10+ | 5.02 EUR |
| 25+ | 4.35 EUR |
| 100+ | 3.73 EUR |
| 1000+ | 3.7 EUR |
| 2000+ | 3.61 EUR |
| 5000+ | 3.54 EUR |
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Technische Details STP170N8F7 STMicroelectronics
Description: MOSFET N-CH 80V 120A TO220, Input Capacitance (Ciss) (Max) @ Vds: 8710 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote STP170N8F7 nach Preis ab 3.54 EUR bis 6.88 EUR
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STP170N8F7 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 80V 120A TO220 Input Capacitance (Ciss) (Max) @ Vds: 8710 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 91 Stücke: Lieferzeit 10-14 Tag (e) |
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