STP185N10F3
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auf Bestellung 17854 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details STP185N10F3
Description: MOSFET N-CH 100V 120A TO220, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote STP185N10F3
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STP185N10F3 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 120A TO220 Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |
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STP185N10F3 | Hersteller : STMicroelectronics |
MOSFET LGS LV MOSFET |
Produkt ist nicht verfügbar |