STP19NM65N
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auf Bestellung 18738 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details STP19NM65N
Description: MOSFET N-CH 650V 15.5A TO220AB, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 7.75A, 10V, Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc), FET Type: N-Channel.
Weitere Produktangebote STP19NM65N
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STP19NM65N | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 15.5A TO220AB Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 7.75A, 10V Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc) FET Type: N-Channel |
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