STP21N90K5

Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 900V; 11.6A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11.6A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 250W
Version: ESD
Technology: SuperMESH5™

Hersteller: STMicroelectronics
Description: MOSFET N-CH 900V 18.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V

Hersteller: STMicroelectronics
MOSFETs N-Ch 900V 0.25 Ohm 18.5A MDmesh K5

Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STP21N90K5 - Leistungs-MOSFET, n-Kanal, 900 V, 18.5 A, 0.25 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 900V
rohsCompliant: YES
Dauer-Drainstrom Id: 18.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 250W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperMESH 5
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.25ohm

Hersteller: ST
Trans MOSFET N-CH 900V 18.5A STP21N90K5 TSTP21N90K5
Anzahl je Verpackung: 2 Stücke