Technische Details STP21NM60N ST
Description: MOSFET N-CH 600V 17A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V.
Weitere Produktangebote STP21NM60N
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| STP21NM60N | Hersteller : ST |
 07+ TSSOP2 |
auf Bestellung 300 Stücke: Lieferzeit 21-28 Tag (e) |
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STP21NM60N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP21NM60N | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 17A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V |
Produkt ist nicht verfügbar |
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STP21NM60N | Hersteller : STMicroelectronics |
MOSFET N-Ch 600 V 0.18 Ohm 16 A 2nd Gen MDmesh |
Produkt ist nicht verfügbar |