STP23N80K5 STMicroelectronics

Description: MOSFET N-CH 800V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
auf Bestellung 1101 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3+ | 8.76 EUR |
50+ | 4.77 EUR |
100+ | 4.62 EUR |
500+ | 4.12 EUR |
1000+ | 4.01 EUR |
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Technische Details STP23N80K5 STMicroelectronics
Description: MOSFET N-CH 800V 16A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V.
Weitere Produktangebote STP23N80K5 nach Preis ab 4.29 EUR bis 8.85 EUR
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STP23N80K5 | Hersteller : STMicroelectronics |
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auf Bestellung 965 Stücke: Lieferzeit 10-14 Tag (e) |
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STP23N80K5 | Hersteller : STMicroelectronics |
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auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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STP23N80K5 | Hersteller : STMicroelectronics |
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auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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STP23N80K5 | Hersteller : STMicroelectronics |
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STP23N80K5 | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STP23N80K5 | Hersteller : STMicroelectronics |
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STP23N80K5 | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 10A; Idm: 64A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Pulsed drain current: 64A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ K5 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STP23N80K5 | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 10A; Idm: 64A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Pulsed drain current: 64A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ K5 |
Produkt ist nicht verfügbar |