Technische Details STP25NM50N ST
Description: MOSFET N-CH 500V 22A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 160W (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Package / Case: TO-220-3, Packaging: Tube, Mounting Type: Through Hole.
Weitere Produktangebote STP25NM50N nach Preis ab 4.52 EUR bis 5.48 EUR
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STP25NM50N Produktcode: 40855
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Lieblingsprodukt
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Hersteller : ST |
Transistoren > MOSFET N-CH Uds,V: 550 Idd,A: 21.05.2015 Rds(on), Ohm: 0.150 Ciss, pF/Qg, nC: 2280/ ZCODE: 8541290010 |
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STP25NM50N | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 500V 22A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: TO-220-3 Packaging: Tube Mounting Type: Through Hole |
Produkt ist nicht verfügbar |
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STP25NM50N | Hersteller : STMicroelectronics |
 MOSFETs N-CHANNEL MOSFET Power MDmesh |
Produkt ist nicht verfügbar |