STP265N6F6AG STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 180A TO220
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.85mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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Technische Details STP265N6F6AG STMicroelectronics
Description: MOSFET N-CH 60V 180A TO220, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 2.85mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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STP265N6F6AG | Hersteller : STMicroelectronics |
MOSFET Automotive-grade N-channel 60 V, 2.3 mOhm typ., 180 A STripFET F6 Power MOSFET in TO-220 package |
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