STP26N65DM2 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8 EUR |
| 10+ | 5.27 EUR |
| 100+ | 3.71 EUR |
| 500+ | 3.05 EUR |
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Technische Details STP26N65DM2 STMicroelectronics
Description: MOSFET N-CH 650V 20A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V.
Weitere Produktangebote STP26N65DM2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| STP26N65DM2 | STMicroelectronics |
MOSFETs N-channel 650 V, 0.156 Ohm typ., 20 A MDmesh DM2 Power MOSFET in a TO-220 packag |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
STP26N65DM2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 12.6A; Idm: 53A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.6A Pulsed drain current: 53A Power dissipation: 170W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: THT Gate charge: 35.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STP26N65DM2 |
|
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.156 Ohm typ., 20 A MDmesh DM2 Power MOSFET in a TO-220 packag
MOSFETs N-channel 650 V, 0.156 Ohm typ., 20 A MDmesh DM2 Power MOSFET in a TO-220 packag
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP26N65DM2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 12.6A; Idm: 53A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.6A
Pulsed drain current: 53A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 35.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 12.6A; Idm: 53A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.6A
Pulsed drain current: 53A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 35.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH