STP270N8F7 STMicroelectronics


sth270n8f7_2-1850909.pdf
Hersteller: STMicroelectronics
MOSFETs N-Ch 80 V 2.1 mOhm 180 A STripFET VI DG
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Lieferzeit 10-14 Tag (e)
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1+5.03 EUR
25+4.33 EUR
100+3.94 EUR
250+3.85 EUR
5000+3.84 EUR
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Technische Details STP270N8F7 STMicroelectronics

Description: MOSFET N CH 80V 180A TO220, Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 315W (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.

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STP270N8F7 STP270N8F7 STMicroelectronics en.DM00071594.pdf Description: MOSFET N CH 80V 180A TO220
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 315W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1006 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.1 EUR
50+4.2 EUR
100+3.95 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STP270N8F7 en.DM00071594.pdf
Hersteller: STMicroelectronics
Description: MOSFET N CH 80V 180A TO220
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 315W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1006 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+8.1 EUR
50+4.2 EUR
100+3.95 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH