STP270N8F7 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.99 EUR |
| 25+ | 5.15 EUR |
| 100+ | 4.69 EUR |
| 250+ | 4.58 EUR |
| 5000+ | 4.57 EUR |
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Technische Details STP270N8F7 STMicroelectronics
Description: MOSFET N CH 80V 180A TO220, Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 315W (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote STP270N8F7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| STP270N8F7 | STM |
 MOSFET N CH 80V 180A TO-220 Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
STP270N8F7 | STMicroelectronics |
Description: MOSFET N CH 80V 180A TO220 Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 315W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
STP270N8F7 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 80V; 180A; Idm: 720A Mounting: THT Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Gate charge: 193nC On-state resistance: 2.5mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 180A Power dissipation: 315W Pulsed drain current: 720A Kind of package: tube Case: TO220-3 Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
STP270N8F7 | STMicroelectronics |
Trans MOSFET N-CH 80V 180A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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STP270N8F7 | STMicroelectronics |
Trans MOSFET N-CH 80V 180A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| STP270N8F7 |
|
Hersteller: STM
MOSFET N CH 80V 180A TO-220 Транзистори
MOSFET N CH 80V 180A TO-220 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP270N8F7 |
|
Hersteller: STMicroelectronics
Description: MOSFET N CH 80V 180A TO220
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 315W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N CH 80V 180A TO220
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 315W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP270N8F7 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 80V; 180A; Idm: 720A
Mounting: THT
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Gate charge: 193nC
On-state resistance: 2.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 315W
Pulsed drain current: 720A
Kind of package: tube
Case: TO220-3
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 80V; 180A; Idm: 720A
Mounting: THT
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Gate charge: 193nC
On-state resistance: 2.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 180A
Power dissipation: 315W
Pulsed drain current: 720A
Kind of package: tube
Case: TO220-3
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP270N8F7 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 80V 180A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 80V 180A 3-Pin(3+Tab) TO-220AB Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STP270N8F7 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 80V 180A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 80V 180A 3-Pin(3+Tab) TO-220AB Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH