Technische Details STP2N62K3 STMicroelectronics
Description: MOSFET N-CH 620V 2.2A TO220, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 620 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), FET Type: N-Channel.
Weitere Produktangebote STP2N62K3 nach Preis ab 0.77 EUR bis 2.51 EUR
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STP2N62K3 | STMicroelectronics |
 Trans MOSFET N-CH 620V 2.2A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1970 Stücke: Lieferzeit 14-21 Tag (e) |
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STP2N62K3 | STMicroelectronics |
Description: MOSFET N-CH 620V 2.2A TO220 Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 620 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) FET Type: N-Channel |
auf Bestellung 1635 Stücke: Lieferzeit 10-14 Tag (e) |
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| STP2N62K3 |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH 620V 2.2A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 620V 2.2A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 1970 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 229+ | 0.77 EUR |
| STP2N62K3 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 2.2A TO220
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 620V 2.2A TO220
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
auf Bestellung 1635 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.51 EUR |
| 11+ | 2.06 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.36 EUR |
| 1000+ | 1.11 EUR |