STP2N62K3 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 2.2A TO220
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
| Anzahl | Preis |
|---|---|
| 9+ | 2.11 EUR |
| 11+ | 1.73 EUR |
| 100+ | 1.35 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 0.93 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STP2N62K3 STMicroelectronics
Description: MOSFET N-CH 620V 2.2A TO220, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 620 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), FET Type: N-Channel.