STP2N80K5 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 3+ | 0.97 EUR |
| 10+ | 0.95 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.7 EUR |
| 5000+ | 0.63 EUR |
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Technische Details STP2N80K5 STMicroelectronics
Description: MOSFET N-CH 800V 2A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): 30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V.
Weitere Produktangebote STP2N80K5 nach Preis ab 0.83 EUR bis 2.73 EUR
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STP2N80K5 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 800V 2A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 100 V |
auf Bestellung 1215 Stücke: Lieferzeit 10-14 Tag (e) |
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