STP34N65M5 STMicroelectronics
auf Bestellung 904 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 6.06 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STP34N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 28A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V.
Weitere Produktangebote STP34N65M5 nach Preis ab 4.89 EUR bis 7.43 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
STP34N65M5 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH Si 650V 28A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 904 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
STP34N65M5 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 650V 0.098 Ohm 29 A MDmesh M5 |
auf Bestellung 1501 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| STP34N65M5 | Hersteller : STMicroelectronics |
|
auf Bestellung 45 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
 |
STP34N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 28A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
STP34N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 28A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
|||||||||||||||
| STP34N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 28A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
||||||||||||||||
| STP34N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 17.7A; Idm: 112A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17.7A Pulsed drain current: 112A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Gate charge: 62.5nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ M5 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
 |
STP34N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 28A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V |
Produkt ist nicht verfügbar |
|||||||||||||||
| STP34N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 17.7A; Idm: 112A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17.7A Pulsed drain current: 112A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Gate charge: 62.5nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ M5 |
Produkt ist nicht verfügbar |