STP34NM60ND STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 29A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.21 EUR |
| 50+ | 9 EUR |
| 100+ | 8.95 EUR |
| 500+ | 8.77 EUR |
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Technische Details STP34NM60ND STMicroelectronics
Description: MOSFET N-CH 600V 29A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V.
Weitere Produktangebote STP34NM60ND nach Preis ab 9.86 EUR bis 10.61 EUR
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