STP35N65DM2 STMicroelectronics
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Technische Details STP35N65DM2 STMicroelectronics
Description: MOSFET N-CH 650V 32A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 16A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 56.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V.
Weitere Produktangebote STP35N65DM2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STP35N65DM2 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 650V 32A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STP35N65DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 32A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STP35N65DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 90A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Gate charge: 56.3nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STP35N65DM2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 32A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 16A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 56.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V |
Produkt ist nicht verfügbar |
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| STP35N65DM2 | Hersteller : STMicroelectronics |
MOSFET N-channel 650 V, 0.093 Ohm typ 32 A MDmesh DM2 Power MOSFET |
Produkt ist nicht verfügbar |
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| STP35N65DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 90A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Gate charge: 56.3nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |