STP360N4F6

STP360N4F6 STMicroelectronics


en.DM00059344.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 120A TO220
Input Capacitance (Ciss) (Max) @ Vds: 17930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Lieferzeit 10-14 Tag (e)
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10+4.91 EUR
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Technische Details STP360N4F6 STMicroelectronics

Description: MOSFET N-CH 40V 120A TO220, Input Capacitance (Ciss) (Max) @ Vds: 17930 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.

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STP360N4F6 STP360N4F6 Hersteller : STMicroelectronics en.DM00059344-1222758.pdf MOSFET N-CH 40V 120A STripFET VI DeepGATE
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