Technische Details STP3LN62K3 STMicroelectronics
Description: MOSFET N-CH 620V 2.5A TO220, Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Drain to Source Voltage (Vdss): 620 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 45W (Tc).
Weitere Produktangebote STP3LN62K3 nach Preis ab 0.86 EUR bis 2.07 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STP3LN62K3 | STMicroelectronics |
Trans MOSFET N-CH 620V 2.5A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
|
|
STP3LN62K3 | STMicroelectronics |
Description: MOSFET N-CH 620V 2.5A TO220Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 620 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 45W (Tc) |
auf Bestellung 964 Stücke: Lieferzeit 10-14 Tag (e) |
|
| STP3LN62K3 |
![]() |
Hersteller: STMicroelectronics
Trans MOSFET N-CH 620V 2.5A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 620V 2.5A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 206+ | 0.86 EUR |
| STP3LN62K3 |
![]() |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 2.5A TO220
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Description: MOSFET N-CH 620V 2.5A TO220
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
auf Bestellung 964 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.07 EUR |
| 50+ | 1.58 EUR |
| 100+ | 1.5 EUR |
| 500+ | 1.34 EUR |


