STP40N65M2 STMicroelectronics
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Technische Details STP40N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 32A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V.
Weitere Produktangebote STP40N65M2
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STP40N65M2 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 650V 32A 3-Pin(3+Tab) TO-220AB Tube |
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| STP40N65M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 32A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP40N65M2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 32A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V |
Produkt ist nicht verfügbar |
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STP40N65M2 | Hersteller : STMicroelectronics |
MOSFETs N-channel 650 V, 0.087 Ohm typ 32 A MDmesh M2 Power MOSFET in TO-220 package |
Produkt ist nicht verfügbar |
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| STP40N65M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 20A; Idm: 128A Type of transistor: N-MOSFET Power dissipation: 250W Case: TO220-3 Mounting: THT Gate charge: 56.5nC Kind of package: tube Technology: MDmesh™ M2 Gate-source voltage: ±25V Pulsed drain current: 128A Kind of channel: enhancement Drain-source voltage: 650V Polarisation: unipolar On-state resistance: 99mΩ Drain current: 20A |
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