STP46N60M6 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 68 mOhm typ., 36 A MDmesh M6 Power MOSFET in a TO-220 package
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.94 EUR |
| 10+ | 8.77 EUR |
| 100+ | 7.79 EUR |
| 500+ | 7.33 EUR |
| 1000+ | 6.62 EUR |
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Technische Details STP46N60M6 STMicroelectronics
Description: MOSFET N-CH 600V 36A TO220, Rds On (Max) @ Id, Vgs: 80mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4.75V @ 250µA, Power Dissipation (Max): 250W (Tc).
Weitere Produktangebote STP46N60M6
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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STP46N60M6 | STMicroelectronics |
Trans MOSFET N-CH 600V 36A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
STP46N60M6 | STMicroelectronics |
Description: MOSFET N-CH 600V 36A TO220 Rds On (Max) @ Id, Vgs: 80mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 250W (Tc) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| STP46N60M6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 23A; Idm: 126A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 126A Gate charge: 53.5nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STP46N60M6 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 36A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 600V 36A 3-Pin(3+Tab) TO-220AB Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STP46N60M6 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 36A TO220
Rds On (Max) @ Id, Vgs: 80mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 250W (Tc)
Description: MOSFET N-CH 600V 36A TO220
Rds On (Max) @ Id, Vgs: 80mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 250W (Tc)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STP46N60M6 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 23A; Idm: 126A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 126A
Gate charge: 53.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 23A; Idm: 126A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 126A
Gate charge: 53.5nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH