Technische Details STP4NB100 ST
Description: MOSFET N-CH 1000V 3.8A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), Rds On (Max) @ Id, Vgs: 4.4Ohm @ 2A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V.
Weitere Produktangebote STP4NB100
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STP4NB100 Produktcode: 143264 |
 Transistoren > MOSFET N-CH |
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STP4NB100 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1KV 3.8A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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STP4NB100 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 1000V 3.8A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 4.4Ohm @ 2A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
Produkt ist nicht verfügbar |
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STP4NB100 | Hersteller : STMicroelectronics |
MOSFET N-Ch 1000 Volt 4 Amp |
Produkt ist nicht verfügbar |