STP5NK50Z STMicroelectronics
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 70W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 70W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
59+ | 1.22 EUR |
81+ | 0.89 EUR |
90+ | 0.8 EUR |
109+ | 0.66 EUR |
114+ | 0.63 EUR |
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Technische Details STP5NK50Z STMicroelectronics
Description: MOSFET N-CH 500V 4.4A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V.
Weitere Produktangebote STP5NK50Z nach Preis ab 0.61 EUR bis 3.69 EUR
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STP5NK50Z | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; 70W; TO220-3 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.7A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 183 Stücke: Lieferzeit 7-14 Tag (e) |
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STP5NK50Z | Hersteller : STMicroelectronics | Trans MOSFET N-CH 500V 4.4A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 5651 Stücke: Lieferzeit 14-21 Tag (e) |
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STP5NK50Z | Hersteller : STMicroelectronics | Trans MOSFET N-CH 500V 4.4A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 5651 Stücke: Lieferzeit 14-21 Tag (e) |
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STP5NK50Z | Hersteller : STMicroelectronics | MOSFET N-Ch 500 Volt 4.4 A Zener SuperMESH |
auf Bestellung 732 Stücke: Lieferzeit 14-28 Tag (e) |
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STP5NK50Z | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 500V 4.4A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V |
auf Bestellung 1680 Stücke: Lieferzeit 21-28 Tag (e) |
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STP5NK50Z | Hersteller : STMicroelectronics | Trans MOSFET N-CH 500V 4.4A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 4621 Stücke: Lieferzeit 14-21 Tag (e) |
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STP5NK50Z | Hersteller : STMicroelectronics | Trans MOSFET N-CH 500V 4.4A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP5NK50Z | Hersteller : STMicroelectronics | Trans MOSFET N-CH 500V 4.4A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |