
STP60NF06FP STMicroelectronics
auf Bestellung 2100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
116+ | 1.27 EUR |
147+ | 0.96 EUR |
244+ | 0.56 EUR |
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Technische Details STP60NF06FP STMicroelectronics
Description: MOSFET N-CH 60V 30A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V.
Weitere Produktangebote STP60NF06FP nach Preis ab 0.56 EUR bis 3.2 EUR
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STP60NF06FP | Hersteller : STMicroelectronics |
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auf Bestellung 2100 Stücke: Lieferzeit 14-21 Tag (e) |
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STP60NF06FP | Hersteller : STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V |
auf Bestellung 971 Stücke: Lieferzeit 10-14 Tag (e) |
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STP60NF06FP | Hersteller : STMicroelectronics |
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auf Bestellung 528 Stücke: Lieferzeit 10-14 Tag (e) |
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STP60NF06FP | Hersteller : STMicroelectronics |
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STP60NF06FP | Hersteller : STMicroelectronics |
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STP60NF06FP | Hersteller : STMicroelectronics |
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STP60NF06FP | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 120A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Pulsed drain current: 120A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 16mΩ Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |