STP60NF10 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 1.13 EUR |
| 2000+ | 1.11 EUR |
| 5000+ | 1.06 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
1000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details STP60NF10 STMicroelectronics
Description: MOSFET N-CH 100V 80A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 40A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 25 V.
Weitere Produktangebote STP60NF10 nach Preis ab 1.02 EUR bis 5.32 EUR
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STP60NF10 | STMicroelectronics |
 Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 6950 Stücke: Lieferzeit 14-21 Tag (e) |
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STP60NF10 | STMicroelectronics |
MOSFETs N-Ch 100 Volt 80 Amp |
auf Bestellung 832 Stücke: Lieferzeit 10-14 Tag (e) |
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STP60NF10 | STMicroelectronics |
Description: MOSFET N-CH 100V 80A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 40A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 25 V |
auf Bestellung 413 Stücke: Lieferzeit 10-14 Tag (e) |
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STP60NF10 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 66A; 300W Mounting: THT On-state resistance: 23mΩ Power dissipation: 300W Polarisation: unipolar Technology: STripFET™ II Drain current: 66A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220-3 |
auf Bestellung 359 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| STP60NF10 | ST |
N-MOSFET 60A 100V 150W 0.024Ω Replacement: STP50NE08, STP50NF08 STP60NF10 TSTP60NF10 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP60NF10 |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 6950 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 1.13 EUR |
| 2000+ | 1.08 EUR |
| 5000+ | 1.02 EUR |
| STP60NF10 |
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Hersteller: STMicroelectronics
MOSFETs N-Ch 100 Volt 80 Amp
MOSFETs N-Ch 100 Volt 80 Amp
auf Bestellung 832 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.18 EUR |
| 10+ | 2.64 EUR |
| 100+ | 2.26 EUR |
| 500+ | 1.89 EUR |
| 1000+ | 1.69 EUR |
| 2000+ | 1.59 EUR |
| 5000+ | 1.54 EUR |
| STP60NF10 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 25 V
Description: MOSFET N-CH 100V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 25 V
auf Bestellung 413 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.32 EUR |
| 10+ | 3.45 EUR |
| 50+ | 2.63 EUR |
| 100+ | 2.37 EUR |
| STP60NF10 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 66A; 300W
Mounting: THT
On-state resistance: 23mΩ
Power dissipation: 300W
Polarisation: unipolar
Technology: STripFET™ II
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 66A; 300W
Mounting: THT
On-state resistance: 23mΩ
Power dissipation: 300W
Polarisation: unipolar
Technology: STripFET™ II
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
auf Bestellung 359 Stücke:
Lieferzeit 14-21 Tag (e)
| STP60NF10 |
|
Hersteller: ST
N-MOSFET 60A 100V 150W 0.024Ω Replacement: STP50NE08, STP50NF08 STP60NF10 TSTP60NF10
Anzahl je Verpackung: 50 Stücke
N-MOSFET 60A 100V 150W 0.024Ω Replacement: STP50NE08, STP50NF08 STP60NF10 TSTP60NF10
Anzahl je Verpackung: 50 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 4.32 EUR |