Weitere Produktangebote STP6N60M2 nach Preis ab 1.46 EUR bis 2.02 EUR
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STP6N60M2 | Hersteller : STMicroelectronics |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 2.9A; 60W Type of transistor: N-MOSFET Technology: MDmesh™ || Plus Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.9A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 74 Stücke: Lieferzeit 14-21 Tag (e) |
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STP6N60M2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 4.5A TO220 Input Capacitance (Ciss) (Max) @ Vds: 232 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.25A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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STP6N60M2 | Hersteller : STMicroelectronics |
MOSFETs N-CH 600V 1.06Ohm 4.5A MDmesh M2 |
Produkt ist nicht verfügbar |