STP6N80K5 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in a TO-220 package
| Anzahl | Preis |
|---|---|
| 1+ | 3.96 EUR |
| 10+ | 2.53 EUR |
| 100+ | 1.72 EUR |
| 500+ | 1.44 EUR |
| 1000+ | 1.24 EUR |
| 2000+ | 1.2 EUR |
| 5000+ | 1.18 EUR |
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Technische Details STP6N80K5 STMicroelectronics
Description: MOSFET N-CH 800V 4.5A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): 30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V.
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STP6N80K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 800V 4.5A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V |
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