Technische Details STP6NC60 ST
Description: MOSFET N-CH 600V 6A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Package / Case: TO-220-3, Packaging: Tube, Operating Temperature: 150°C (TJ), Mounting Type: Through Hole.
Weitere Produktangebote STP6NC60
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
STP6NC60 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 600V 6A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Package / Case: TO-220-3 Packaging: Tube Operating Temperature: 150°C (TJ) Mounting Type: Through Hole |
Produkt ist nicht verfügbar |