STP6NM60N STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 4.6A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Technische Details STP6NM60N STMicroelectronics
Description: MOSFET N-CH 600V 4.6A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote STP6NM60N
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STP6NM60N | Hersteller : STMicroelectronics |
MOSFET N Ch 600V 0.85 Ohm 4.6A |
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