STP75NF20 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1000+ | 1.95 EUR |
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Technische Details STP75NF20 STMicroelectronics
Description: MOSFET N-CH 200V 75A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3260 pF @ 25 V.
Weitere Produktangebote STP75NF20 nach Preis ab 1.76 EUR bis 6.53 EUR
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STP75NF20 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 200V 75A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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STP75NF20 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 200V 75A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 3680 Stücke: Lieferzeit 14-21 Tag (e) |
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STP75NF20 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 200V 75A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 3680 Stücke: Lieferzeit 14-21 Tag (e) |
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STP75NF20 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 47A; 190W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 47A Case: TO220-3 On-state resistance: 34mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±20V Power dissipation: 190W Technology: STripFET™ |
auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) |
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STP75NF20 | Hersteller : STMicroelectronics |
MOSFETs Low charge STripFET |
auf Bestellung 1384 Stücke: Lieferzeit 10-14 Tag (e) |
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STP75NF20 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 200V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3260 pF @ 25 V |
auf Bestellung 1032 Stücke: Lieferzeit 10-14 Tag (e) |
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