Technische Details STP7N80K5 STMicroelectronics
Description: MOSFET N-CH 800V 6A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V.
Weitere Produktangebote STP7N80K5 nach Preis ab 1.2 EUR bis 6.37 EUR
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STP7N80K5 | STMicroelectronics |
 Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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STP7N80K5 | STMicroelectronics |
Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 784 Stücke: Lieferzeit 14-21 Tag (e) |
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STP7N80K5 | STMicroelectronics |
Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) |
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STP7N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 6A; 110W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 71 Stücke: Lieferzeit 14-21 Tag (e) |
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STP7N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 6A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V |
auf Bestellung 688 Stücke: Lieferzeit 10-14 Tag (e) |
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| STP7N80K5 | ST |
Trans MOSFET N-CH 800V 6A STP7N80K5 TSTP7N80K5 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP7N80K5 |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 1.2 EUR |
| STP7N80K5 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 784 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 90+ | 1.96 EUR |
| 91+ | 1.92 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.55 EUR |
| STP7N80K5 |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 90+ | 1.98 EUR |
| 91+ | 1.88 EUR |
| 100+ | 1.73 EUR |
| 500+ | 1.48 EUR |
| STP7N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 6A; 110W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 6A; 110W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 3.44 EUR |
| 29+ | 2.98 EUR |
| 50+ | 2.02 EUR |
| STP7N80K5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
Description: MOSFET N-CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
auf Bestellung 688 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.07 EUR |
| 50+ | 2.51 EUR |
| 100+ | 2.26 EUR |
| 500+ | 1.82 EUR |
| STP7N80K5 |
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auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 6.37 EUR |