Technische Details STP7NM60N STMicroelectronics
Description: MOSFET N-CH 600V 5A TO220, Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 45W (Tc).
Weitere Produktangebote STP7NM60N
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STP7NM60N | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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| STP7NM60N |
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auf Bestellung 14097 Stücke: Lieferzeit 21-28 Tag (e) |
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STP7NM60N | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 5A TO220 Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 45W (Tc) |
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