STP7NM60N STMicroelectronics
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details STP7NM60N STMicroelectronics
Description: MOSFET N-CH 600V 5A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V.
Weitere Produktangebote STP7NM60N
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STP7NM60N | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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| STP7NM60N |
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auf Bestellung 14097 Stücke: Lieferzeit 21-28 Tag (e) |
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STP7NM60N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
|
 |
STP7NM60N | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 5A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V |
Produkt ist nicht verfügbar |