STP7NM80
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 6.85 EUR |
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Technische Details STP7NM80 ST
Description: MOSFET N-CH 800V 6.5A TO220-3, Package / Case: TO-220-3, Packaging: Tube, Power Dissipation (Max): 90W (Tc), Rds On (Max) @ Id, Vgs: 1.05Ohm @ 3.25A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 5V @ 250µA.
Weitere Produktangebote STP7NM80
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STP7NM80 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 800V 6.5A TO220-3Package / Case: TO-220-3 Packaging: Tube Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 3.25A, 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 5V @ 250µA |
Produkt ist nicht verfügbar |
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STP7NM80 | Hersteller : STMicroelectronics |
MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A |
Produkt ist nicht verfügbar |