STP7NM80
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 7.35 EUR |
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Technische Details STP7NM80 ST
Description: MOSFET N-CH 800V 6.5A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Rds On (Max) @ Id, Vgs: 1.05Ohm @ 3.25A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V.
Weitere Produktangebote STP7NM80
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| STP7NM80 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 800V 6.5A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP7NM80 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 6.5A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP7NM80 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 800V 6.5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 3.25A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V |
Produkt ist nicht verfügbar |
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STP7NM80 | Hersteller : STMicroelectronics |
MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A |
Produkt ist nicht verfügbar |