STP80N340K6 STMicroelectronics
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 2.95 EUR |
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Technische Details STP80N340K6 STMicroelectronics
Description: DISCRETE, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 340mOhm @ 6A, 10V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 400 V.
Weitere Produktangebote STP80N340K6
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STP80N340K6 | Hersteller : STMICROELECTRONICS |
 Description: STMICROELECTRONICS - STP80N340K6 - Leistungs-MOSFET, n-Kanal, 800 V, 12 A, 0.285 ohm, TO-220, DurchsteckmontagetariffCode: 85412900 Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 115W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.285ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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| STP80N340K6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-220 Tube |
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STP80N340K6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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| STP80N340K6 | Hersteller : STMicroelectronics |
Description: DISCRETE Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 6A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 400 V |
Produkt ist nicht verfügbar |
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STP80N340K6 | Hersteller : STMicroelectronics | MOSFETs N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET in a TO-220 package |
Produkt ist nicht verfügbar |
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| STP80N340K6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 12A; Idm: 28A; 115W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 12A Pulsed drain current: 28A Power dissipation: 115W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.34Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 17.8nC |
Produkt ist nicht verfügbar |