STP80N6F6 STMicroelectronics
Hersteller: STMicroelectronics
Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220AB Tube Automotive AEC-Q101
| Anzahl | Preis |
|---|---|
| 186+ | 0.78 EUR |
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Technische Details STP80N6F6 STMicroelectronics
Description: MOSFET N-CH 60V 110A TO220, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 120W (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote STP80N6F6 nach Preis ab 0.78 EUR bis 0.78 EUR
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STP80N6F6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220AB Tube Automotive AEC-Q101 |
auf Bestellung 1197 Stücke: Lieferzeit 14-21 Tag (e) |
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STP80N6F6 | Hersteller : STMicroelectronics |
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STP80N6F6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 60V 110A TO220 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
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