STP80N6F6 STMicroelectronics
Hersteller: STMicroelectronicsTrans MOSFET N-CH 60V 80A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 1197 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 187+ | 0.79 EUR |
| 188+ | 0.76 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STP80N6F6 STMicroelectronics
Description: MOSFET N-CH 60V 110A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V, Power Dissipation (Max): 120W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote STP80N6F6 nach Preis ab 0.79 EUR bis 0.79 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
|
|
STP80N6F6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 60V 80A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1197 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||
 |
STP80N6F6 | Hersteller : STMicroelectronics |
MOSFET N-CH 60V 110A STripFET VI DeepGATE |
auf Bestellung 927 Stücke: Lieferzeit 10-14 Tag (e) |
|||||
 |
STP80N6F6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
|||||
| STP80N6F6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
||||||
 |
STP80N6F6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 60V 110A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |