Technische Details STP80N70F4
Description: MOSFET N-CH 68V 85A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), Rds On (Max) @ Id, Vgs: 9.8mOhm @ 40A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 68 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V. 
Weitere Produktangebote STP80N70F4
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | 
|---|---|---|---|---|---|
| STP80N70F4 Produktcode: 140338 
            
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                 |  Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | |||
|   | STP80N70F4 | Hersteller : STMicroelectronics |  Trans MOSFET N-CH 68V 85A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | |
|  | STP80N70F4 | Hersteller : STMicroelectronics |  Description: MOSFET N-CH 68V 85A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 40A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 68 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V | Produkt ist nicht verfügbar | |
|   | STP80N70F4 | Hersteller : STMicroelectronics |  MOSFETs N-channel 68 V, 8.2 mOhm typ., 85 A STripFET DeepGATE Power MOSFET in TO-220 package | Produkt ist nicht verfügbar |