STP80NE03L06
Hersteller:
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details STP80NE03L06
Description: MOSFET N-CH 30V 80A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±22V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote STP80NE03L06
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| STP80NE03L-06 | Hersteller : ST |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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STP80NE03L-06 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 30V 80A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±22V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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STP80NE03L-06 | Hersteller : STMicroelectronics |
 MOSFET N-Ch 30 Volt 80 Amp |
Produkt ist nicht verfügbar |