Technische Details STP80NE03L-06 ST
Description: MOSFET N-CH 30V 80A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±22V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V.
Weitere Produktangebote STP80NE03L-06
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| STP80NE03L06 |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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STP80NE03L-06 Produktcode: 188620 |
IC > IC andere |
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STP80NE03L-06 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 30V 80A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±22V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V |
Produkt ist nicht verfügbar |
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STP80NE03L-06 | Hersteller : STMicroelectronics |
 MOSFET N-Ch 30 Volt 80 Amp |
Produkt ist nicht verfügbar |