STP80NF55-08 STMicroelectronics
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 320A; 300W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 320A; 300W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 57 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
20+ | 3.58 EUR |
23+ | 3.2 EUR |
30+ | 2.46 EUR |
31+ | 2.32 EUR |
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Technische Details STP80NF55-08 STMicroelectronics
Description: MOSFET N-CH 55V 80A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V.
Weitere Produktangebote STP80NF55-08 nach Preis ab 2.32 EUR bis 6.84 EUR
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STP80NF55-08 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 320A; 300W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Pulsed drain current: 320A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) |
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STP80NF55-08 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 55V 80A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V |
auf Bestellung 28 Stücke: Lieferzeit 21-28 Tag (e) |
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STP80NF55-08 | Hersteller : STMicroelectronics | MOSFET N-Ch 55 Volt 80 Amp |
auf Bestellung 1000 Stücke: Lieferzeit 196-210 Tag (e) |
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STP80NF55-08 Produktcode: 172526 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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STP80NF55-08 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP80NF55-08 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP80NF55-08 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP80NF55-08 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP80NF55-08 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STP80NF55-08 - Leistungs-MOSFET, n-Kanal, 55 V, 80 A, 0.008 ohm, TO-220, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 55V rohsCompliant: Y-EX Dauer-Drainstrom Id: 80A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 300W Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.008ohm |
Produkt ist nicht verfügbar |