STP80NF70 STMicroelectronics
auf Bestellung 371 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.78 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.72 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.33 EUR |
| 2000+ | 1.31 EUR |
| 5000+ | 1.27 EUR |
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Technische Details STP80NF70 STMicroelectronics
Description: MOSFET N-CH 68V 98A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 98A (Tc), Rds On (Max) @ Id, Vgs: 9.8mOhm @ 40A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 68 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V.
Weitere Produktangebote STP80NF70 nach Preis ab 1.76 EUR bis 3.91 EUR
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STP80NF70 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 68V 98A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 40A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 68 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V |
auf Bestellung 372 Stücke: Lieferzeit 10-14 Tag (e) |
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STP80NF70 Produktcode: 163842
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