Technische Details STP85NF55L ST
Description: MOSFET N-CH 55V 80A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote STP85NF55L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| STP85NF55L | STM |
 Power MOSFETs - Low Voltage N Channel Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
STP85NF55L | STMicroelectronics |
Description: MOSFET N-CH 55V 80A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
STP85NF55L | STMicroelectronics |
MOSFET N-Ch 55 Volt 80 Amp |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STP85NF55L |
|
Hersteller: STM
Power MOSFETs - Low Voltage N Channel Транзистори
Power MOSFETs - Low Voltage N Channel Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP85NF55L |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 55V 80A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 55V 80A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP85NF55L |
|
Hersteller: STMicroelectronics
MOSFET N-Ch 55 Volt 80 Amp
MOSFET N-Ch 55 Volt 80 Amp
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH