STP8NK85Z

Description: MOSFET N-CH 850V 6.7A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Drain to Source Voltage (Vdss): 850 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4.5V @ 100µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.35A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.