Technische Details STP8NM50N STMicroelectronics
Description: MOSFET N-CH 500V 5A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote STP8NM50N nach Preis ab 1.62 EUR bis 6.06 EUR
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STP8NM50N | STMicroelectronics |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 3A; 45W; TO220-3 Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 45W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 790mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 52 Stücke: Lieferzeit 14-21 Tag (e) |
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STP8NM50N | STMicroelectronics |
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 3980 Stücke: Lieferzeit 14-21 Tag (e) |
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STP8NM50N | STMicroelectronics |
MOSFETs N-Ch 500V 0.73 Ohm 5A MDmesh II PWR MO |
auf Bestellung 547 Stücke: Lieferzeit 10-14 Tag (e) |
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STP8NM50N | STMicroelectronics |
Description: MOSFET N-CH 500V 5A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 796 Stücke: Lieferzeit 10-14 Tag (e) |
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| STP8NM50N | ST |
Trans MOSFET N-CH 500V 5A STP8NM50N TSTP8NM50N Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP8NM50N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 3A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 790mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 3A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 790mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 2.18 EUR |
| 52+ | 1.63 EUR |
| STP8NM50N |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 3980 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 39+ | 4.5 EUR |
| 70+ | 2.42 EUR |
| 100+ | 2.27 EUR |
| 500+ | 1.96 EUR |
| 1000+ | 1.78 EUR |
| 2000+ | 1.62 EUR |
| STP8NM50N |
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Hersteller: STMicroelectronics
MOSFETs N-Ch 500V 0.73 Ohm 5A MDmesh II PWR MO
MOSFETs N-Ch 500V 0.73 Ohm 5A MDmesh II PWR MO
auf Bestellung 547 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.95 EUR |
| 10+ | 2.98 EUR |
| 100+ | 2.68 EUR |
| 500+ | 2.18 EUR |
| 1000+ | 2 EUR |
| 2000+ | 1.92 EUR |
| STP8NM50N |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 500V 5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 796 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.06 EUR |
| 10+ | 3.93 EUR |
| 50+ | 3.01 EUR |
| 100+ | 2.73 EUR |
| 500+ | 2.2 EUR |
| STP8NM50N |
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auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 2.39 EUR |