STP8NM50N STMicroelectronics
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 3A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.79Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 3A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.79Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
64+ | 1.13 EUR |
73+ | 0.99 EUR |
82+ | 0.88 EUR |
94+ | 0.77 EUR |
99+ | 0.73 EUR |
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Technische Details STP8NM50N STMicroelectronics
Description: MOSFET N-CH 500V 5A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 50 V.
Weitere Produktangebote STP8NM50N nach Preis ab 0.73 EUR bis 5.46 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
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STP8NM50N | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 3A; 45W; TO220-3 Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 45W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.79Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 125 Stücke: Lieferzeit 7-14 Tag (e) |
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STP8NM50N | Hersteller : STMicroelectronics | MOSFET N-Ch 500V 0.73 Ohm 5A MDmesh II PWR MO |
auf Bestellung 885 Stücke: Lieferzeit 14-28 Tag (e) |
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STP8NM50N | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 500V 5A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 50 V |
auf Bestellung 988 Stücke: Lieferzeit 21-28 Tag (e) |
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STP8NM50N | Hersteller : STMicroelectronics | Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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STP8NM50N | Hersteller : ST |
Trans MOSFET N-CH 500V 5A STP8NM50N TSTP8NM50N Anzahl je Verpackung: 10 Stücke |
auf Bestellung 84 Stücke: Lieferzeit 7-14 Tag (e) |
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STP8NM50N | Hersteller : STMicroelectronics | Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |