STP8NM50N STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 140+ | 1.25 EUR |
| 144+ | 1.19 EUR |
| 500+ | 1.08 EUR |
| 1000+ | 1.04 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
140 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details STP8NM50N STMicroelectronics
Description: MOSFET N-CH 500V 5A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 50 V.
Weitere Produktangebote STP8NM50N nach Preis ab 0.94 EUR bis 5.95 EUR
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STP8NM50N | STMicroelectronics |
 Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1780 Stücke: Lieferzeit 14-21 Tag (e) |
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STP8NM50N | STMicroelectronics |
Description: MOSFET N-CH 500V 5A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 50 V |
auf Bestellung 796 Stücke: Lieferzeit 10-14 Tag (e) |
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STP8NM50N | STMicroelectronics |
MOSFETs N-Ch 500V 0.73 Ohm 5A MDmesh II PWR MO |
auf Bestellung 537 Stücke: Lieferzeit 10-14 Tag (e) |
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STP8NM50N | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 3A; 45W; TO220-3 Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 45W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 790mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| STP8NM50N | ST |
Trans MOSFET N-CH 500V 5A STP8NM50N TSTP8NM50N Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| STP8NM50N |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 1780 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 118+ | 1.49 EUR |
| 141+ | 1.19 EUR |
| 145+ | 1.12 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.94 EUR |
| STP8NM50N |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 50 V
Description: MOSFET N-CH 500V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 50 V
auf Bestellung 796 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.93 EUR |
| 10+ | 3.84 EUR |
| 50+ | 2.95 EUR |
| 100+ | 2.67 EUR |
| 500+ | 2.15 EUR |
| STP8NM50N |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 500V 0.73 Ohm 5A MDmesh II PWR MO
MOSFETs N-Ch 500V 0.73 Ohm 5A MDmesh II PWR MO
auf Bestellung 537 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.95 EUR |
| 10+ | 2.98 EUR |
| 100+ | 2.67 EUR |
| 500+ | 2.18 EUR |
| 1000+ | 2.05 EUR |
| 2000+ | 1.95 EUR |
| STP8NM50N |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 3A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 790mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 3A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 790mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
| STP8NM50N |
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auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 2.39 EUR |