STP9NK90Z STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 41+ | 4.44 EUR |
| 50+ | 4.25 EUR |
| 100+ | 3.89 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
41 Stücke
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Technische Details STP9NK90Z STMicroelectronics
Description: MOSFET N-CH 900V 8A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.6A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 25 V.
Weitere Produktangebote STP9NK90Z nach Preis ab 4.06 EUR bis 9.97 EUR
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STP9NK90Z | STMicroelectronics |
  Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
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STP9NK90Z | ST |
STP9NK90Z N-MOSFET 8A 900V 160W 1.3? TSTP9NK90Z |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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STP9NK90Z | STMicroelectronics |
Description: MOSFET N-CH 900V 8A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.6A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 25 V |
auf Bestellung 196 Stücke: Lieferzeit 10-14 Tag (e) |
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STP9NK90Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO220-3; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 5A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Technology: SuperMesh™ |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STP9NK90Z |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 41+ | 4.46 EUR |
| 50+ | 4.36 EUR |
| 100+ | 4.06 EUR |
| STP9NK90Z |
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Hersteller: ST
STP9NK90Z N-MOSFET 8A 900V 160W 1.3? TSTP9NK90Z
STP9NK90Z N-MOSFET 8A 900V 160W 1.3? TSTP9NK90Z
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 5.46 EUR |
| STP9NK90Z |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 900V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 25 V
Description: MOSFET N-CH 900V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 25 V
auf Bestellung 196 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.97 EUR |
| 10+ | 6.62 EUR |
| 50+ | 5.18 EUR |
| 100+ | 4.71 EUR |
| STP9NK90Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO220-3; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO220-3; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)