STPSC10065D STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1+ | 6 EUR |
| 10+ | 2.68 EUR |
| 100+ | 2.6 EUR |
| 500+ | 2.32 EUR |
| 1000+ | 2.04 EUR |
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Technische Details STPSC10065D STMicroelectronics
Description: DIODE SIL CARB 650V 10A TO220AC, Current - Reverse Leakage @ Vr: 130 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 670pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Weitere Produktangebote STPSC10065D nach Preis ab 2.52 EUR bis 6.67 EUR
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STPSC10065D | Hersteller : STMicroelectronics |
 Description: DIODE SIL CARB 650V 10A TO220ACCurrent - Reverse Leakage @ Vr: 130 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 670pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
auf Bestellung 538 Stücke: Lieferzeit 10-14 Tag (e) |
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